Porous nitride semiconductors reviewed

Nanosphere Lithography for Nitride Semiconductors

Polarons in Wurtzite Nitride Semiconductors

Polaron binding energy and effective mass are calculated for semiconductors with wurtzite crystalline structure from the first order electron-phonon corrections to the self-energy. A recently introduced Fröhlich-like electron-phonon interaction Hamiltonian which accounts for the LO and TO polarizations mixing due to the anisotropy is used in the calculation. The polaronic damping rates are eval...

Semiconductor-oxide Nanocomposites Based on Porous Semiconductors

Rare-earth containing oxide nanocomposites are prepared of porous GaP and GaAs templates in a controlled fashion. The initial porous GaP and GaAs networks are replaced by GaPO4 and Ga2O3 structures, respectively, during annealing at temperatures from 500 to 900 C. The impregnation of Eu and Er lanthanides from EuCl3:C2H5OH and ErCl3:C2H5OH solutions results in the formation of lanthanide contai...

Fröhlich modes in porous III–V semiconductors

1 Institut für Theoretische Physik, TU Bergakademie Freiberg, Bernhard-von-Cotta-Strasse 4, D-09596 Freiberg, Germany 2 Department of Electrical Engineering and Computer Science, The University of Michigan, 1301 Beal Avenue, Ann Arbor, MI 48109-2122, USA 3 Institute of Applied Physics, Technical University of Moldova, Boulevard Stefan cel Mare 168, MD-2004 Chisinau, Moldova 4 Institut für Exper...

Polarization induced electron populations in III - V nitride semiconductors

Polarization induced electron populations in III-V nitride semiconductors Transport, growth, and device applications by Debdeep Jena The III-V nitride semiconductors (GaN, AlN, InN) exhibit unusually large electronic polarization fields. These polarization fields can be engineered to achieve carrier confinement, doping, and band engineering in novel ways. This work presents work in engineering ...